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Sponsors and Exhibitors


A technical exhibition will be held during the conference. Companies that provide materials, devices, equipment and services for testing, characterization, production and development of SiC and Wide Bandgap materials are encouraged to exhibit at the conference. For further information regarding the exhibition, please check our web site or contact:

Philippe Godignon
Centro Nacional de Microelectrónica
Tel: +34 935947700  Ext:1207
Fax: +34 935801496

e.mail: philippe.godignon@cnm.es

»Download Exhibition Area (.PDF)«

»Download Dossier Industria (.DOC)«

»Download Sponsors (.PDF)«

If you are interested in booking a booth, please fill up the following document that will be sent directly to the Technical Secretariat. Please take note that you will receive a confirmation in the following days. Receipt of the reservation form by the Secretariat is essential to guarantee allocation of specialised exhibition spaces. If the selected booth is not available, the Technical Secretariat will inform you about it so that you could choose another one of the same characteristics.

The available booths are the following ones: 11,20 and 21.

»RESERVATION FORM ECSCRM 2008«

SiCrystal produces and supplies high-quality single crystalline silicon carbide (SiC) wafers for customers worldwide.
Dow Corning Compound Semiconductor Solutions, a wholly owned subsidiary of Dow Corning Corporation, is a global supplier of compound semiconductor materials and services.
AIXTRON is the leading supplier of multiwafer hot-wall CVD production equipment for wide bandgap semiconductors such as SiC. The product portfolio also comprises bulk growth equipment utilizing the hot-wall technology.

NovaSiC has developed specific polishing processes for various silicon carbide with:
- polytype : 6H, 4H, 3C…
- doping : N,P,SI
- orientation : c-plane, a-plane, m-plane, on to 8° off, Si- or C-face -
size : 10x10 mm up to 6’’
We offer state of the art polishing to enhance epitaxy and device output or performance. Our StepSiC® process yields : scratch free, low roughness, ultra-clean, “epi-ready” surfaces, with excellent geometrical features no damaged layers (specification may vary according to materials).
New service : epitaxy
More information on: www.novasic.com
E-mail : sales@novasic.com

Hologenix understands the Semiconductor Industry and its quality driven demands. Our focus is to provide the industry with advanced metrology and inspection equipment for diverse applications.
Evans Analytical Group® (EAG) is the world's leading, fully integrated and independent materials characterization lab network delivering world class testing services and expertise in surface analysis, trace elemental analysis, electron microscopy, failure analysis and circuit edit, when and where they are needed. Our analytical services help you develop new processes and materials faster, transfer those processes to production, develop and qualify new production tools, solve yield problems, and more.
LPE's production strategy concentrates on reactors dedicated to severe applications such as Schottky, Power Transistor, PowerMos, Rectifier, very thick epi layers for IGBT devices grown in a single process; NPN, patterned wafers and others on arsenic doped substrates, CMOS, Buried Layers on Sb doped substrates and Mixed Technology.
TranSiC develops bipolar junction transistors (BJT) in silicon carbide (SiC) for near future compact power electronic systems
Leading manufacturer of plasma etch and deposition systems that are used to fabricate compound semiconductor, optoelectronic and MEMS devices. STS offers a wide range of processes for SiC, GaN, and related compound semiconductor materials, on a range of wafer handling platforms for R&D or production applications.
Technologies and Devices International (TDI) (An Oxford Instruments Company) is a world leader in the development of Hydride Vapour Phase Epitaxy (HVPE) processes and techniques for the production of novel compound semiconductors such as GaN, AlN, AlGaN, InN, InGaN. Key features of HVPE technology include; flexible growth rates from 1 µm/hour (for submicron layer control) to1000 µm /hour for fast buffer layer growth), low dislocation density, cost effective templates for device manufacturing and novel research materials
TanKeBlue Semiconductor Co.Ltd is the first company in China to manufacture and sell worldwide the proprietary quality SiC wafer at competitive price to serve global customers.
ESICAT-Japan provides you with high-quality SiC epitaxial wafers for power device application using transferred technology from AIST (National Institute of Advance Industrial Science and Industry), CRIEPI (Central Research Institute of Electric Power Industry) and SDK (Showa Denko K.K.).
Cree, Inc. is a market-leading innovator and manufacturer of semiconductors that enhance the value of LED solid-state lighting, power and communications products by significantly increasing their energy performance. Cree drives increased Return on Energy™ (ROE™) solutions into multiple applications including exciting alternatives in brighter and more-tunable LED light for general illumination, backlighting for more-vivid displays, optimized power management for high-current, switch-mode power supplies and variable-speed motors, and more-effective wireless infrastructure for data and voice communications. Cree customers range from innovative lighting fixtures makers to defense-related federal agencies.
SemiSouth is a silicon carbide (SiC) based semiconductor company specializing in SiC materials and electrical components for high-power, high-efficiency, harsh-environment power management and conversion applications.”
The Candela™ Series of Optical Surface Analyzers (OSA) from KLA-Tencor are advanced surface inspection and metrology systems for optoelectronic materials and semiconductor wafers. OSA systems combine proprietary technologies to simultaneously measure surface reflectivity and topography for automatic detection and classification of defects including particles, stains, scratches, pits and bumps. OSA technology delivers process control and yield improvement for inspection of both opaque substrates, as well as transparent materials such as sapphire and glass.