| 08:00 |
Registration |
| 09:00 |
Openings |
| |
Mo-1 Plenary |
| 9:20 |
INVITED: Thick epitaxial layers growth by chlorine addition | La Via Francesco |
| 9:50 |
INVITED: Perspectives of SiC power devices in highly efficient renewable energy conversion systems | Zacharias Peter |
| 10:20 |
Coffee |
| |
Mo-2 Defects 1 |
| 10:50 |
INVITED: The Silicon vacancy in SiC | Janzen Erik |
| 11:20 |
Pulsed EPR Studies of the Tv2a center in 4H-SiC | Isoya Junichi |
| 11:40 |
Antisite pairs identified as dominant irradiation induced defects in 4H-SiC | Gerstmann Uwe |
| 12:00 |
Identification of the di-carbon antisite defect in n-type 4H-SiC | Gali Adam |
| 12:20 |
Characterization of screw dislocations in a 4H-silicon carbide diode | Tanuma Ryohei |
| 12:40 |
Lunch |
| 13:45 |
Mo-P Poster Session I |
| |
Invited poster: Fast epitaxial growth of 4H-SiC and analysis of defect transfer | Tsuchida Hidekazu |
| |
Invited poster: Spatial profiling of planar defects in 4H-SiC epilayers using micro-photoluminescence mapping | Feng Gan |
| |
Mo-3 Defects 2 |
| 15:45 |
INVITED: Nanocharacterisation of SiC related materials, structures and devices:
beyond structural imaging to charge transport and physical parameters determination | Raineri Vito |
| 16:15 |
Deep levels generated by ion-implantation in n- and p-type 4H-SiC | Kawahara Kotaro |
| 16:35 |
Interstitial defects introduced by electron-irradiation at 77 K in SiC | Nguyen Son |
| 16:55 |
The influence of growth conditions on the annealing of irradiation induced EH6,7 defects in 4H-SiC | Pintilie Ioana |
| 17:15 |
Defects in fast chloride-based 4H-SiC epitaxy | Beyer Franziska |
| 17:35 |
End |
| 19:00 |
Welcome Reception |
| |
Tu-1 Cubic SiC |
| 08:30 |
INVITED: Unseeded sublimation growth of high quality 3C-SiC single | Chaussende Didier |
| 9:00 |
High Quality Single Crystal 3C-SiC(111) Films Grown on Si | Locke Christopher |
| 9:20 |
Role of Substrate Disorientation in Relaxation of 3C-SiC Layers | Zielinski Marcin |
| 9:40 |
Towards large area (111) 3C-SiC films grown on off-oriented (111) Si substrates | Severino Andrea |
| 10:00 |
Study on the Precipitation of 3C/4H From a Liquid Phase | Kim-Hak Olivier |
| 10:20 |
Coffee |
| |
Tu-2 Graphene on SiC |
| 10:50 |
INVITED: Atomic and electronic structure of epitaxial graphene on SiC: the STM approach | Mallet Pierre |
| 11:20 |
Growth of Graphene Layers on Silicon Carbide | Strupinski Wlodek |
| 11:40 |
Raman and Electrical Investigation of Heteroepitaxial Graph N/A | Shivaraman Shriram |
| 12:00 |
Quality control of graphene layers grown on SiC | Camara Nicolas |
| 12:20 |
Study of electrical characteristics of the CNT/SiC interface | Perrone Denis |
| 12:40 |
Lunch |
| 13:45 |
Tu-P Poster Session II |
| |
Tu-3 Bulk and Epi growth |
| 15:45 |
INVITED: Basal plane dislocation mitigation in 8 degree off-cut 4H-SiC through in situ growth interrupts during chemical vapor deposition | VanMil Brenda |
| 16:15 |
Defect Control in SiC Manufacturing | Berkman Elif |
| 16:35 |
On-axis Homoepitaxy on Full 2" Wafer for High Power Applications | Hassan Jawad |
| 16:55 |
Chloride-based SiC epitaxial growth | Pedersen Henrik |
| 17:15 |
Atomistic and continuum simulations of the homo-epitaxial growth | Massimo Camarda |
| 17:35 |
Coffee |
| |
Tu-4 Industrial Session |
| 18:00 |
Industry News from TranSiC, TankeBlue, Yoli and CREE Inc. |
| 19:00 |
End |
| |
We-1 Reliability |
| 8:50 |
INVITED: Comparative analysis of SiC power device structures | Wright Nick |
| 9:20 |
Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO | Grieb Michael |
| 9:40 |
300ºC SiC Blocking Diodes for Solar Array Strings | Brosselard Pierre |
| 10:00 |
Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-face | Harada Shinsuke |
| 10:20 |
Channel Hot-Carrier Effect of 4H-SiC MOSFET | Yu Liangchun |
| 10:40 |
Coffee |
| |
We-2 Surface and Interface |
| 11:10 |
Hydrogen Adsorption and Etching on a Si-rich SiC Surface | Deak Peter |
| 11:30 |
Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide | Chatterjee Aveek |
| 11:50 |
Interface States in MOS Capacitors: a Comparative Study Between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique | Lars Sundnes Løvlie |
| 12:10 |
Characterization of the SiO2/SiC interface with Impedance Spectroscopy | Sobas Pawel |
| 12:30 |
Lunch |
| 13:45 |
We-P Poster Session III |
| |
We-3 Power MOSFETs |
| 15:45 |
INVITED: Development of high-performance SiC MOSFETs | Nakamura Takashi |
| 16:15 |
Implications of threshold voltage instability on SiC DMOSFET operation | Lelis Aivars |
| 16:35 |
Reliability of Large Area Gate Oxide on the C-face of 4H-SiC | Hatakeyama Tetsuo |
| 16:55 |
Improved On-Current of 4H-SiC MOSFET with a Three-Dimensional Gate Structure |Nanen Yuichiro |
| 17:15 |
Performance of 60A, 1200V 4H-SiC DMOSFETs | B. A. Hull |
| 17:35 |
End |
| 20:00 |
Gala Dinner |
| |
Th-1 Device Processing |
| 8:50 |
INVITED: Polycrystalline and monocrystalline SiC devices in Space applications | Berberich Stefan |
| 9:20 |
Heat-resistant Ni2Si-based contacts on SiC connected to Si-doped Al interconnect via Ta/TaN barrier | Tanimoto Satoshi |
| 9:40 |
Effects of N implantation on the performance of 4H-SiC MOSFET | Poggi Antonella |
| 10:00 |
AlON/SiO2 stacked gate dielectrics for 4H-SiC MIS devices | Hosoi Takuji |
| 10:20 |
Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes | Soloviev Stanislav |
| 10:40 |
Coffee |
| |
Th-2 Unipolar and Bipolar Devices |
| 11:10 |
A New High Current Gain 4H-SiC Bipolar Junction Transistor With Suppressed Surface Recombination Structure: SSR-BJT | Nonaka Kenichi |
| 11:30 |
Assessment of high and low temperature performance of SiC BJTs | Nawaz Muhammad |
| 11:50 |
VJFET based all-SiC Normally-Off Cascode Switch for High Temperature Power Handling Applications | Veliadis Victor |
| 12:10 |
Characterization and Modeling of SiC LTJFET for Analog Integrated Circuit Simulation and Design | Maralani Hamid |
| 12:30 |
Lunch |
| |
Th-3 Applications and Future Perspectives |
| 13:40 |
INVITED: Critical Issues for MOS Based Power Devices in 4H-SiC | Ryu Sei-Hyung |
| 14:10 |
Comparison of SiC-JFET and Si-IGBT inverter losses | Koch Immo |
| 14:30 |
Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors | Bertuccio Giuseppe |
| 14:50 |
Bio-interfacing with SiC | Sharp Ian |
| 15:10 |
Closing Session |
| 15:30 |
End |
