Invited Presentations

Dr. Francesco La Via
CNR-IMM Sezione di Catania/ LPE (Italy)
Thick epitaxial layers growth by chlorine addition

Prof. Peter Zacharias
Universität Kassel (Germany)
Perspectives of SiC power devices in highly efficient renewable energy conversion systems

Prof. Erik Janzén
Department of Physics, Chemistry and Biology, Linköping University (Sweden)
The Silicon vacancy in SiC

Prof. Vito Raineri
CNR-IMM Sezione di Catania (Italy)
Nanocharacterisation of SiC related materials, structures and devices:
beyond structural imaging to charge transport and physical parameters determination

Dr. Didier Chaussende
Laboratoire des Matériaux et du Génie Physique, Grenoble INP (France)
Unseeded sublimation growth of high quality 3C-SiC single crystals

Dr. Pierre Mallet
Institut NEEL/CNRS – UJF (France)
Atomic and electronic structure of epitaxial graphene on SiC: the STM approach

Dr. Brenda VanMil
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington DC (USA)
Basal plane dislocation mitigation in 8 degree off-cut 4H-SiC through in situ growth interrupts during chemical vapor deposition

Prof. Nicholas Wright
University of NewCastle (UK)
Comparative analysis of SiC power device structures

Dr. Takashi Nakamura
New Material Devices R&D Center, ROHM CO (Japan)
Development of high-performance SiC MOSFETs

Dr. Stefan Berberich
EADS Astrium GmbH (Germany-Spain)
Polycrystalline and monocrystalline SiC devices in Space applications

Dr. Sei-Hyung Ryu
CREE Research Inc. North Carolina (USA)
Critical Issues for MOS Based Power Devices in 4H-SiC

INVITED POSTERS

Dr. Hidekazu Tsuchida.
Central Research Institute of Electric Power Industry (CRIEPI) (Japan)
Fast epitaxial growth of 4H-SiC and analysis of defect transfer

Dr. Gan Feng
Department of Electronic Science and Engineering, Kyoto University, Japan
Spatial profiling of planar defects in 4H-SiC epilayers using micro-photoluminescence mapping