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Updated version of: Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer Hidekazu Tsuchida et als.

BEST STUDENT PAPERS AWARDS ACREO/MANSIC

Material elaboration (WP1) : Stephano LEONE "Growth of thick 4H-SiC epitaxial layers on on-axis Si-face substrates with HCl addition"

Material Characterization (WP2) : Christian RIEDL "Structural and electronic properties of epitaxial graphene on SiC(0001)"

Device fabrication (WP3) : Masahiro HORITA "First demonstration of SiC MISFETS with 4H-AlN gate dielectric heteroepitaxially grown on 4H-SiC(11-20)"